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【Call for Papers】IFWS & SSLCHINA 2021 論文征集

日期:2021-07-14 來源:半導體產業網閱讀:488
核心提示:Call for PapersThe 7th International Forum on Wide Bandgap Semiconductors The 18th China International Forum on Solid St

英文征稿

Call for Papers

The 7th International Forum on Wide Bandgap Semiconductors &The 18th China International Forum on Solid State Lighting (IFWS & SSLCHINA 2021) will be held on November 29-December 1, 2021 at Shenzhen Convention & Exhibition Center. IFWS & SSLCHINA 2021 is a premier forum for technical and industrial discussions in all areas of power semiconductor and solid-state lighting. It aims to promote collaborative innovation of the whole industry chain including materials growth, equipment, devices and applications in the related areas. 

Accepted papers will be submitted for inclusion into IEEE Xplore

DateNov 29 – Dec 1, 2021

Venue:Shenzhen - Guangdong - China

Hosts

China Advanced Semiconductor Industry Innovation Alliance (CASA)

China Solid State Lighting Alliance (CSA)

CONTENTS

IFWS & SSLCHINA 2021-征文通知-EN-c

importANT DATES & METHOD OF SUBMISSION

1. Deadline for abstract submission: August 15th 2021;

2. Paper acceptance notification: August31st, 2021;

3. Deadline for full paper submission: September 30th, 2021;

4. Full paper acceptance notification: October 15th, 2021;

5. Deadline for softcopy submission of presentations PPT and posters: November 22nd, 2021.

REVIEW PROCEDURE

1. Authors must submit extended abstracts in advance.

2. Authors will be informed of paper acceptance with categories of Oral Presentation, Poster Presentation and Conference Proceedings.

3. Authors prepare final submissions depending on the following status:

1)    Oral Presentations: Authors need to prepare paper and presentation files (PPT/PDF)

2)    Poster Presentations: Authors need to prepare paper and poster files (The Technical Program Committee will audit the posters and inform the authors. Authors need to prepare posters according to the template and bring the hardcopy posters to the designated Poster Display area for wall mounting).

3)    Conference Proceedings: Authors should prepare the papers. Authors must prepare final papers according to the guidelines and given template.

Note:

1)     The template can be downloaded from the paper contribution platform of the forum: http://www.sslchina.org/paper?lang=en or http://www.ifws.org.cn/paper?lang=en. Authors are required to prepare papers and other materials based on the provided template in time to pass the review successfully.

2)     Full length manuscripts of accepted papers will be published in IEEE Xplore, and Indexed by EI.

PAPER REQUIREMENTS

1. Basic Requirements

1)    The paper should not have been published in other technical publications or by other technical conferences.

2)    Prominent theme, distinct content, accurate data, rigorous discussion, clear conclusion and adopted legal measurement unit.

2. Abstract Submission

Authors are required to submit extended abstracts according to the paper format template given on the conference website.

3. Paper Format

The paper should be written in APA Format according to the paper format template given on the conference website. The papers should adopt Word format. The total pages of the paper are limited to 4.

4. Language of Abstracts, Posters and Papers

        1)      Abstracts/posters/papers must be in Standard English.

        2)      Both Chinese and English are acceptable for oral presentations, but only English can be used for the presentation files (PPT/PDF) and conference proceedings.

Note: No commercial promotions allowed for specific companies and products; otherwise, the papers will not be selected for oral presentations and conference proceedings.

For further questions about the paper submission, please contact us,

Lu BAI

Telephone: 010-82387600-602

Email: papersubmission@china-led.net

Technical Program Committee

Chair

ZHANG Rong(Xiamen University)

Co-Chairs

LIU Ming (Institute of Microelectronics, CAS),

GU Ying (PLAGH),

JIANG Fengyi(Nanchang University),

LI Jinmin(Institute of Semiconductors, CAS),

ZHANG Guoyi(Peking University),

SHEN Bo (Peking University),

QIU Yufeng(Xiamen University / State Grid),

SHENG Kuang(Zhejiang University),

ZHANG Bo (University of Electronic Science and Technology of China),

XU Ke(Suzhou Institute of Nano-tech and Nano-bionics, CAS),

Kevin J. CHEN (Hong Kong University of Science and Technology),

Wai Tung NG (University of Toronto),

ZHANG Guoqi (Delft University of Technology)

Conveners(In Alphabetical Order)

AO Jinping (University of Tokushima),

BAI Song(Nanjing Electronic Devices Institute),

BI Wengang(Jiangsu Institute of Advanced Semiconductors),

BI YongTechnical Institute of Physics & Chemistry, CAS,

Bu Weili(SMVIC),

CAI Benzhi(Harbin Medical University),

CAI Jianqi(China National Institute of Standardization),

CAI Shujun(Hebei Semiconductor Research Institute, CETC),

CHANG Tianhai(HUAWEI),

CHEN Defu (Beijing Institute of Technology),

CHEN Mingxiang(Huazhong University of Science and Technology),

CHEN Tangsheng(Nanjing Electronic Devices Institute),

CHEN Xiaolong(Institute of Physics, CAS),

CHEN Xiongbin(Institute of Semiconductors, CAS),

CHEN Changqing(Huazhong University of Science and Technology),

CHI Nan(Fudan University),

CUI Jinjiang(SIBET CAS),

DONG Jianfei(SIBET CAS)

DOU Linping (CSA),

DU Zhiyou(AMEC),

DUAN Lian(Tsinghua University),

FENG Gan(EpiWorld International Co.,Ltd.),

KUO Hao-Chung (National Chiao Tung University),

GUO Weiling(Beijing University of Technology),

HAO Luoxi (Tongji University),

HE Dongxian(China University of Agriculture),

Hossein Nafar(Mind Optoelectronics),

HUANG Kai (Xiamen University),

KANG Junyong(Xiamen University),

LI Dabing(Changchun Institute of Optics, Fine Mechanics and Physics, CAS),

LI Gang (Changzhou Xingyu Car Light Co.),

LI Guoqiang(South China University of Technology),

Shi-Wei. Ricky LEE (Hong Kong University of Science and Technology),

LI Xiaohang (King Abdullah University of Science & Technology),

LIANG Huinan(Xinguan Technology),

LIAO Liangsheng(Soochow University),

LIN Weiming(Fuzhou University),

LIN Xinnan(Peking University Shenzhen Graduate School),

LIN Yandan(Fudan University),

LIU Bin (Nanjing University),

Jay. Guoxu LIU (ShineOn),

LIU Houcheng(South China Agricultural University),

LIU Jianli (ZTE),

LIU Sheng (Wuhan University),

LIU Yang(Sun Yat-sen University),

LIU Ying(Dalian Ocean University),

LIU Yuhuai(Zhengzhou University),

LIU Zhaojun(Southern University of Science and Technology),

LONG Shibing(University of Science and Technology of China),

G.Q. LU (Virginia Tech),

LU Hai (Nanjing University),

Ronnier LUO (Zhejiang University),

LUO Xiaobing (Huazhong University of Science and Technology),

MA Dongge(South China University of Technology),

MA Songlin(TCL),

MO Qingwei(Elec-Tech International),

MOUTongsheng (Zhejiang University),

NIU Pingjuan(Tiangong University),

PAN Jinming (Zhejiang University),

QIU Yun (BOE),

QU Jia (WMU Zhejiang Eye Hospital),

SHAO Jiaping(ZVISION),

SUN Guosheng(Institute of Semiconductors, CAS),

SUN Qian (SINANOCAS),

SUN Xiaowei(Southern University of Science and Technology),

TAN Yizhou(PLAGH),

TANG Jingting(Hebei Semiconductor Research Institute, CETC),

TAO Guoqiao (Ampleon Netherlands B.V),

TAO Xutang(Shandong University),

TIAN Pengfei(Fudan University),

WANG Hongxing(Xi'an Jiaotong University),

WANG Junxi(Institute of Semiconductors, CAS),

WANG Laili(Xi'an Jiaotong University),

WANG Maojun(Peking University),

WANG Xinqiang (Peking University),

WANG Yanqing (Fudan University),

WANG Zhiyue(CETC),

WEI Minchen(The Hong Kong Polytechnic University),

WU Jun (NAURA Technology Group),

XIAO Guowei(APT Electronics),

XIONG Daxi(SIBET CAS),

XU Hong(LumiGrow, Inc.),

XU Xiangang (Shandong University),

XU Zheng (Beijing Jiaotong University),

XU Zhigang(Nanjing Agricultural University),

XU Fujun(Peking University),

YAN Chunhui (Shenzhen Institute of Wide Bandgap Semiconductors),

YAN Qun(Fuzhou University),

YANG Daoguo(Guilin University of Electronic Technology),

YANG Hua (Institute of Semiconductors, CAS),

YANG Jianwen(Sun Yat-sen University),

YANG Qichang(Institute of Urban Agriculture, CAAS),

YE Jiandong(Nanjing University),

YI Xiaoyan (Institute of Semiconductors, CAS),

YU Hongyu(Southern University of Science and Technology),

YU Kunshan (CASA),

YUE Wensheng(Huawei Technologies Co., Ltd.),

YUN Feng (Xi'an Jiaotong University),

ZHANG Jianli(Nanchang University),

ZHANG Jincheng(Xidian University),

ZHANG Junming(Zhejiang University),

ZHANG Naiqian (Dynax Semiconductor),

Jon Zhang(Fudan University),

ZHANG Yuqiu(Fudan University),

ZHANG Yun (Institute of Semiconductors, CAS),

ZHAO Degang(Institute of Semiconductors, CAS),

ZHAO Jianping(China Academy of Building Research),

ZHAO Lixia(Institute of Semiconductors, CAS),

ZHONG Haizheng(Beijing Institute of Technology),

ZHU Tao (Shannon)

 

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