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等離子體輔助分子束外延生長AlN薄膜AlN epilayers grown by plasma assisted molecular beam epitaxy劉歡南京大學LIU HuanNanjing University

氧化鎵高導熱異質集成射頻器件High Thermal Conductivity Heterogeneous Integrated RF Devices for Ga?O?葉建東南京大學教授YE JiandongProfessor of Nanjing University

28GHz氮化鎵基時間調制波束成形系統28GHz GaN based time modulated beamforming system黃同德南京理工大學副教授HUANG TongdeAssociate Professor of Nanjing University of Science and Technology

氮化鎵功率器件耐壓理論與電場均勻化技術研究Research on the breakdown theory and electric field homogenization technology of GaN-based Power Devices劉建華南京郵電大學博士

NiO/Ga2O3異質結二極管中深能級陷阱和載流子輸運機制Correlation of deep-level traps and carrier transport mechanisms in NiO/Ga2O3 heterojunction diodes汪正鵬南京大學Zhengpeng WangNanjing University

氮化鎵及碳化硅紫外探測器技術與產業化應用陸海鎵敏光電董事長、南京大學教授LU HaiProfessor of Nanjing University

基于HVPE-Ga2O3氮化的GaN襯底技術The preparation of GaN based on the nitridation of HVPE-Ga2O3 films修向前南京大學教授XIU Xiangqian-Professor of Nanjing university

【極智報告】南京大學陳琳：6英寸GaN襯底生長用HVPE反應腔的三維數值模擬

南京大學教授陸海報告中介紹了寬禁帶半導體紫外光電探測器及其應用進展。介紹了基于III族氮化物半導體和SiC的高性能UV光電探測器的材料生長，設計和制造方面的最新工作。