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碳化硅單晶缺陷研究及產業化進展Research and Industrialization Progress of SiC Single Crystal Defects陳秀芳山東大學教授、南砂晶圓董事CHEN XiufangProfessor of Shandong University, Board Director of Guangzhou Summit Crystal Semiconductor Co.,Ltd

氧化鎵PECVD外延生長及光電信息感知器件研究Research on PECVD Epitaxial Growth of Gallium Oxide and the Photoelectric Information Sensing Devices李山南京郵電大學副教授、蘇州鎵和半導體研發總監LI ShanAssociate Professor, Nanjing University of Posts and Telecommunications, RD director of Suzhou GAO Semiconductor Co. Ltd.

電流/功率截止頻率為135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鵬山東大學新一代半導體材料研究院研究員CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University

-Ga2O3單晶的體晶生長與性能Bulk crystal growth and properties of?-Ga2O3Single Crystal穆文祥山東大學副教授MU WenxiangAssociate Professor of Shandong University

新型寬禁帶壓電半導體材料-Ga2O3及其在射頻諧振器中的應用-Ga2O3: an Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators王鋼中山大學佛山研究院院長，中山大學半導體照明材料及器件國家地方聯合工程實驗室主任、教授WANG GangProfessor and Dean of Foshan Institute of Sun Yat-Sen University; Director of the National-Local Joint Engineering Laboratory of Semiconductor

第三代半導體助力數字能源產業發展The wide bandgap semiconductor boosts the development of digital energy industry于坤山北京世紀金光半導體有限公司副總裁YU KunshanVice President of CENGOL