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面向的Ga2O3功率器件應(yīng)用：封裝、魯棒性和多維器件Ga2O3Power Device Toward Application: Packaging, Robustness, and Multidimensional Devices張宇昊弗吉尼亞理工大學(xué)電力電子中心副教授ZHAGN YuhaoAssociate Professor of Center for Power Electronics Systems at Virginia Tech

基于液態(tài)金屬打印和飛秒激光照射的高性能原子薄Ga2O3氣體傳感器High-Performance atomically thin Ga2O3Gas Sensors via Liquid Metal Printing and Femtosecond Laser Irradiation徐承龍皇家墨爾本大學(xué)微納研究院研究員XU ChenglongProfessor of Micro Nano Research Facility, STEM College, RMIT University

基于表面電位的-Ga2O3功率MOSFET緊湊模型A Surface Potential Based Compact Model for -Ga2O3 Power MOSFETs周凱中國(guó)科學(xué)技術(shù)大學(xué)ZHOU KaiChina University of Science and Technology

Ultrawide Bandgap Ga2O3 Technologies - Benefits of Heterogeneous IntegrationMartin KUBALL英國(guó)布里斯托大學(xué)新興技術(shù)系主任、教授Martin KUBALLRoyal Academy of Engineering Chair in Emerging Technologies at the University of Bristol, UK

橫向和縱向-Ga2O3功率MOSFET的十年進(jìn)展A Decade of Advances in Lateral and Vertical -Ga2O3 Power MOSFETs黃文海香港科技大學(xué)副教授Man Hoi WONGAssociate Professor of The Hong Kong University of Science and Technology

-Ga2O3單晶的體晶生長(zhǎng)與性能Bulk crystal growth and properties of?-Ga2O3Single Crystal穆文祥山東大學(xué)副教授MU WenxiangAssociate Professor of Shandong University

利用高Al組分-(AlGa)2O3緩沖層在藍(lán)寶石襯底上優(yōu)化生長(zhǎng)高質(zhì)量-Ga2O3厚膜Growth of high quality - Ga2O3 thick film on sapphire by using high Al content - (AlGa)2O3 buffer layer張赫之大連理工大學(xué)副教授ZHANG HezhiAssociate professor of Dalian University of Technology

NiO/Ga2O3異質(zhì)結(jié)二極管中深能級(jí)陷阱和載流子輸運(yùn)機(jī)制Correlation of deep-level traps and carrier transport mechanisms in NiO/Ga2O3 heterojunction diodes汪正鵬南京大學(xué)Zhengpeng WangNanjing University

MgO（100）上生長(zhǎng)柱狀納米晶b-Ga2O3外延薄膜及其高靈敏度日盲探測(cè)器研究Columnar-nanodomained epitaxial b-Ga2O3 thin films on MgO(100) for solar-blind photodetectors with exceedingly high sensitivity何云斌湖北大學(xué)教授HE YunbinProfessor of Hubei University

Ga2O3光電二極管的可控制備及應(yīng)用Controllable Fabrication and Application of Ga2O3 Photodiodes盧紅亮復(fù)旦大學(xué)微電子學(xué)院教授LU HongliangProfessor of Fudan University

新型寬禁帶壓電半導(dǎo)體材料-Ga2O3及其在射頻諧振器中的應(yīng)用-Ga2O3: an Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators王鋼中山大學(xué)佛山研究院院長(zhǎng)，中山大學(xué)半導(dǎo)體照明材料及器件國(guó)家地方聯(lián)合工程實(shí)驗(yàn)室主任、教授WANG GangProfessor and Dean of Foshan Institute of Sun Yat-Sen University; Director of the National-Local Joint Engineering Laboratory of Semiconductor

基于HVPE-Ga2O3氮化的GaN襯底技術(shù)The preparation of GaN based on the nitridation of HVPE-Ga2O3 films修向前南京大學(xué)教授XIU Xiangqian-Professor of Nanjing university

中國(guó)科學(xué)院微電子研究所研究員龍世兵分享了基于(100) -Ga2O3 單晶的肖特基二極管和MOS電容的研究成果。基于型氧化鎵所生產(chǎn)的一些器件在能源使用中發(fā)揮著重要的作用。能源使用的安全性是一個(gè)重要問(wèn)題，在自然能源不斷減少，價(jià)格不斷上升的背景下，我們需要找到一個(gè)更加有效的方式來(lái)利用能源。當(dāng)前在高電壓應(yīng)用領(lǐng)域，包括高鐵和智能電網(wǎng)等，硅仍然是主導(dǎo)材料，但有一定局限性，比如禁帶比較窄等。與寬禁帶材料相比，有弱勢(shì)的地方。