Investigation of Defect Characteristics in GaN Layers With Different Carbon Doping Concentration作者：王宏躍，許實清，周斌，施宜軍，付志偉，陳思，路國光，黃云，王金延單位：工業和信息化部電子第五研究所，北京大學
High valley polarization in monolayer WS2 on AlGaNAuthor：Xu Li，Xinlong Zeng，Zhiming Wu，Yaping Wu，Junyong KangInstitute：Department of Physics, Xiamen University
Suppression of the Regrowth Interface Leakage Current in AlGaN/GaN HEMTs by Unactivated Mg Doped GaN Layer作者：劉婷, 渡邊浩崇 ,新田州吾,王嘉,于國浩,安藤裕二, 本田善央, 天野浩,田中墩之,小出康夫單位：名古屋大學未來材料系統研究所，名古屋大學電子學系，北京化工大學數理學院
Transverse electric lasing at record short wavelength 244.63 nm from GaN quantum wells with weak exciton localizationAuthor：Maocheng Shan, Yi Zhang, Xiaohang Li, Changqing ChenInstitute：Wuhan National Laboratory for Optoelectronics, King Abdullah University of Science and Technology (KAUST)
