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基于大失配外延的氮化物第三代半導體材料與器件Nitride Semiconductor Materials and Devices Based on Large Mismatch Epitaxy沈波北京大學理學部副主任、特聘教授SHEN Bo Deputy Deanand Distinguished Professorof Facultyof Science, Peking University

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SiC功率器件制造工藝特點與核心裝備創新進展Manufacturing process characteristics and key equipment development of SiC power devices鞏小亮中國電子科技集團公司第四十八研究所 半導體裝備研究部副主任GONGXiaoliang Deputy director of Semiconductor equipment research department, the 48th Research Institute of China Electronics Technology Group Corporation