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電流/功率截止頻率為135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鵬山東大學新一代半導體材料研究院研究員CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University

氮化鎵推動5G、射頻能源及其他領域的創新GaN Driving innovation in 5G, RF Energy and beyond裴軼蘇州能訊高能半導體有限公司副總裁PEI YiVice President of Dynax Semiconductor, Inc

AECQ-101車規級認證的高性能1200V SiC MOS器件史文華清純半導體研發經理SHI Wenhua RD Manager of SiCHAIN Co.,Ltd.

SiC MOS在新能源汽車充電樁中的技術進展及應用田亮南瑞聯研半導體有限責任公司碳化硅產品線負責人TIAN Liang Leader of SiC Product for NARI-GEIRI semiconductor co.Ltd

功率半導體國產銀燒結整體解決方案Power semiconductor domestic silver sintering overall solution吳昊深圳市先進連接科技有限公司總經理WU Hao General Manager of Shenzhen Advancde Joining Technology Co.,Ltd.

全色顯示材料與3D芯片集成技術Integrated technology of panchromatic display materials and 3D chips范謙東南大學下一代半導體材料研究所研究員

基于光響應聚合物的Micro-LED可編程巨量組裝技術研究進展Research Progress of the Micro-LED Programmable Massive Assembly Technology Based on Photoresponsive Polymers龔政廣東省科學院半導體研究所教授，新型顯示團隊負責人Gong ZhengProfessor of the Institute of Semiconductors, Guangdong Academy of Sciences, Head of the Frontier Display Technology Team

等離子刻蝕技術在第三代化合物半導體領域的應用Application of Plasma Etching Technology in the Third-generation Compound Semiconductor Field謝秋實北京北方華創微電子裝備有限公司 第一刻蝕事業部副總經理XIE QiushiDeputy General Manager of NAURA Technology Group Co., Ltd.

GaN半導體垂直腔面激光器的仿真設計與分析Simulation Design and Analysis of GaN Semiconductor Vertical Cavity Surface Laser張紫輝河北工業大學教授ZHANG ZihuiProfessor of Hebei University of Technology

激光雷達用的1550nm磷化銦半導體激光器1550 nm InP semiconductor laser for lidar黃永光河南仕佳光子科技股份有限公司有源產品技術總監,中科院半導體所研究員HUANG YongguangTechnical Director of Henan Shijia Photons Technology Co., Ltd., Professor of Institute of Semiconductors, Chinese Academy of Sciences

基于藍光半導體激光器的新器件：SWOT分析New devices based on blue laser diodes: SWOT analysis.Mike LESZCZYNSKI波蘭高壓物理研究所研究員Mike LESZCZYNSKIProfessor of Institute of High Pressure Physics, Poland

超寬禁帶半導體氧化鎵及金剛石的晶體生長模擬研究Modeling of ultrawide Bandgap Semiconductor crystal growth for Gallium oxide and Diamond付昊蘇州思體爾軟件科技有限公司副總經理Henry FUVice General Manager of SuZhou STR Software Technology Co., Ltd.

超寬禁帶六方氮化硼二維原子晶體及其光電器件Growth of ultra-wide band-gap two-dimensional hexagonal boron nitride for optoelectronic devices張興旺中國科學院半導體所研究員ZHANG XingwangProfessor of Institute of Semiconductors, Chinese Academy of Sciences

新型寬禁帶壓電半導體材料-Ga2O3及其在射頻諧振器中的應用-Ga2O3: an Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators王鋼中山大學佛山研究院院長，中山大學半導體照明材料及器件國家地方聯合工程實驗室主任、教授WANG GangProfessor and Dean of Foshan Institute of Sun Yat-Sen University; Director of the National-Local Joint Engineering Laboratory of Semiconductor

第三代半導體技術MicroLED光電顯示世界周佳利晶微電子技術（江蘇）有限公司 總經理助理/Micro LED研究院副院長ZHOU JiaLEADSTAR Micro-Crystal Display Corporation(JiangSu)Ltd.

用于Micro LED芯片規模量產化的化學剝離生長襯底技術Chemical Peel Growth Substrate Technology for Mass Production of Micro LED Chips郝茂盛上海芯元基半導體科技有限公司總經理HAO MaoshengGeneral Manager of Shanghai Chipfoundation Semiconductor Technology Co., Ltd.

全球產業鏈頂級智囊匯聚蘇州 共議第三代半導體產業新風向第八屆國際第三代半導體論壇暨第十九屆中國國際半導體照明論壇在蘇州盛大召開2月8日，第八屆國際第三代半導體論壇（IFWS）第十九屆中國國際半導體照明論壇（SSLCHINA）在蘇州盛大開幕。在這場被視為全球第三代半導體行業風向標的盛會上，大會主席、全國政協教科衛體委員會副主任、科技部原副部長曹健林，中國科學院院士、浙江大學教授楊德仁，中國科學院院士、南昌大學副校

寬禁帶半導體助推電動汽車進程Wide Bandgap Devices Empower Vehicle Electrification李道會--蔚來汽車功率半導體設計團隊負責人、高級總監

用于先進SiC功率模塊的整體解決（核心設備/材料/工程）方案Overall solution (core equipment/materials/engineering) for advanced SiC power module周鑫蘇州博湃半導體技術有限公司市場銷售總監ZHOU XinDirector of Sales Marketing, Suzhou Bopai Semiconductor Technology Co., Ltd.

第三代半導體助力數字能源產業發展The wide bandgap semiconductor boosts the development of digital energy industry于坤山北京世紀金光半導體有限公司副總裁YU KunshanVice President of CENGOL