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Lars SAMUELSON院士:
32380
Lars SAMUELSON院士:
實(shí)現(xiàn)超小型全氮化微型LED的納米級(jí)材料科學(xué)Nanometer-scale Materials Science Enabling Ultra-small All-Nitride Micro-LEDsLarsSAMUELSON瑞典皇家科學(xué)院及工程院兩院院士、中國(guó)科學(xué)院外籍院士、瑞典德隆大學(xué)教授、南方科技大學(xué)講席教授LarsSamuelsonMember of Royal Swedish Academy of Engineering, Member of Royal Swedish Academy of Sciences，F(xiàn)oreign Member of the Chinese Academy of Sciences, Professor of Lund Univer
323800
SSLCHINA2025-01-09 15:47
北京大學(xué)理學(xué)部副主任
32430
北京大學(xué)理學(xué)部副主任
基于大失配外延的氮化物第三代半導(dǎo)體材料與器件Nitride Semiconductor Materials and Devices Based on Large Mismatch Epitaxy沈波北京大學(xué)理學(xué)部副主任、特聘教授SHEN Bo Deputy Deanand Distinguished Professorof Facultyof Science, Peking University
324300
IFWS2025-01-09 15:42
辰華半導(dǎo)體郭炳磊：用
2120
辰華半導(dǎo)體郭炳磊：用
用于氮化鎵異質(zhì)外延的高溫PVD氮化鋁緩沖層技術(shù)High Temperature PVD AlN e Buffer Layer Technology for GaN Heteroepitaxy
21200
IFWS2025-01-09 14:28
日本NTT基礎(chǔ)研究實(shí)驗(yàn)
4560
日本NTT基礎(chǔ)研究實(shí)驗(yàn)
氮化鋁基半導(dǎo)體材料及器件的最新進(jìn)展Recent Progress on AlN-based Semiconductor Materials and Devices谷保芳孝日本NTT基礎(chǔ)研究實(shí)驗(yàn)室負(fù)責(zé)人、資深杰出研究員Taniyasu YOSHITAKAGroup leader and Senior Distinguished Researcher of NTT Basic Research Laboratories, NTT Corporation
45600
IFWS2025-01-09 14:25
中國(guó)科學(xué)院蘇州納米所
4440
中國(guó)科學(xué)院蘇州納米所
氨熱法氮化鎵單晶生長(zhǎng)研究進(jìn)展及面臨的挑戰(zhàn)Progress and Challenges in Bulk GaN Crystal Growth by Ammonothermal Method任國(guó)強(qiáng)中國(guó)科學(xué)院蘇州納米技術(shù)與納米仿生研究所、研究員REN GuoqiangProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences
44400
IFWS2025-01-09 14:24
中電科四十六所新材料
5800
中電科四十六所新材料
氮化鋁單晶材料研究進(jìn)展與應(yīng)用展望Research Progress and Application Prospect of AlN Single Crystal Materials程紅娟中國(guó)電子科技集團(tuán)第四十六所新材料研發(fā)中心副主任CHENG HongjuanDeputy Director of New Materials Research and Development Center of CETC 46THInstitute
58000
IFWS2025-01-09 14:21
思體爾總經(jīng)理LAMBRINA
12110
思體爾總經(jīng)理LAMBRINA
基于量產(chǎn)的氮化鎵基光電子及功率器件的外延建模Modeling of Production-scale Epitaxy for Optical and Power GaN-based Devices LAMBRINAKIMARIIA蘇州思體爾軟件科技有限公司總經(jīng)理LAMBRINAKI MARIIAGeneral Manager of Suzhou STR Software CO.,Ltd.
121100
IFWS2025-01-09 14:20
深圳平湖實(shí)驗(yàn)室第四代
5900
深圳平湖實(shí)驗(yàn)室第四代
超寬禁帶半導(dǎo)體氧化鎵和氮化鋁特性研究Research on the Characteristics of Ultra-wide Bandgap Semiconductor GaO and AlN張道華深圳平湖實(shí)驗(yàn)室第四代半導(dǎo)體首席科學(xué)家、新加坡工程院院士ZHANG DaohuaChief Scientist of Fourth-generation Semiconductors of Shenzhen Pinghu Laboratory, Academician the Academy of Engineering, Singapore
59000
IFWS2025-01-09 14:02
南京理工大學(xué)副教授黃
11220
南京理工大學(xué)副教授黃
28GHz氮化鎵基時(shí)間調(diào)制波束成形系統(tǒng)28GHz GaN based time modulated beamforming system黃同德南京理工大學(xué)副教授HUANG TongdeAssociate Professor of Nanjing University of Science and Technology
112200
guansheng2023-05-22 15:18
能訊高能半導(dǎo)體副總裁
10770
能訊高能半導(dǎo)體副總裁
氮化鎵推動(dòng)5G、射頻能源及其他領(lǐng)域的創(chuàng)新GaN Driving innovation in 5G, RF Energy and beyond裴軼蘇州能訊高能半導(dǎo)體有限公司副總裁PEI YiVice President of Dynax Semiconductor, Inc
107700
guansheng2023-05-22 15:17
美國(guó)弗吉尼亞理工大學(xué)
15540
美國(guó)弗吉尼亞理工大學(xué)
中高壓（1-10 kV）氮化鎵功率器件新進(jìn)展New Progress in Medium and High Voltage (1-10 kV) GaN Power Devices張宇昊美國(guó)弗吉尼亞理工大學(xué)助理教授ZHANG Yuhao Assistant Professor, Virginia Tech University
155400
guansheng2023-05-22 15:01
潤(rùn)新微電子副總經(jīng)理王
6690
潤(rùn)新微電子副總經(jīng)理王
后快充時(shí)代的氮化鎵功率器件產(chǎn)業(yè)化GaN Power Devices Beyond Adapter Applications王榮華潤(rùn)新微電子（大連）有限公司副總經(jīng)理WANG RonghuaVice General Manager of Runxin Microelectronics
66900
guansheng2023-05-22 15:00
南京郵電大學(xué)博士劉建
8930
南京郵電大學(xué)博士劉建
氮化鎵功率器件耐壓理論與電場(chǎng)均勻化技術(shù)研究Research on the breakdown theory and electric field homogenization technology of GaN-based Power Devices劉建華南京郵電大學(xué)博士
89300
guansheng2023-05-22 14:56
英諾賽科產(chǎn)品應(yīng)用主任
8150
英諾賽科產(chǎn)品應(yīng)用主任
氮化鎵在新能源智能汽車的應(yīng)用探索與實(shí)踐Research of InnoGaN in New-energy Intelligent?Vehicle Applications孟無忌英諾賽科產(chǎn)品應(yīng)用主任工程師Eric MENGChief Engineer of Product Application for Innoscience
81500
guansheng2023-05-22 14:38
甬江實(shí)驗(yàn)室研究員王文
15600
甬江實(shí)驗(yàn)室研究員王文
異質(zhì)集成氮化鎵功率模塊的量產(chǎn)制造工藝研究A Fabrication Process for Heterogeneous Integrated GaN Power Modules王文博甬江實(shí)驗(yàn)室研究員WANG WenboProfessor of Yongjiang Laboratory (Y-Lab)
156000
guansheng2023-05-22 14:29
清華大學(xué)信息電子工程
9840
清華大學(xué)信息電子工程
面向AR微顯示應(yīng)用的超小尺寸氮化物Micro-LED研究Study on ultra-small III-nitride Micro-LEDs for AR applications汪萊清華大學(xué)信息電子工程系光電子研究所所長(zhǎng)WANG LaiInstitute of Information Optoelectronic Technology, Department of Electronic Engineering, Tsinghua University
98400
guansheng2023-05-22 14:06
賀利氏電子中國(guó)區(qū)研發(fā)
5650
賀利氏電子中國(guó)區(qū)研發(fā)
Condura.ultraTM無銀AMB氮化硅基板---車規(guī)級(jí)功率模塊用高性價(jià)比解決方案Condura.ultraTM silver free AMB --- cost-effective solution for automotive power module張靖賀利氏電子中國(guó)區(qū)研發(fā)總監(jiān)ZHANG JingDirector of Innovation China, Heraeus Electronics
56500
guansheng2023-05-22 13:55
中國(guó)科學(xué)院蘇州納米所
10010
中國(guó)科學(xué)院蘇州納米所
氮化鎵基激光器和超輻射管研究進(jìn)展Progress of GaN based laser diodes and superluminescene diodes劉建平中國(guó)科學(xué)院蘇州納米技術(shù)與納米仿生研究所納米器件研究部研究員LIU JianpingProfessor of Nanodevice Research Department of Suzhou Institute of Nanotechnology and Nanobionics, Chinese Academy of Sciences
100100
guansheng2023-05-22 10:07
中科院長(zhǎng)春光機(jī)所研究
11960
中科院長(zhǎng)春光機(jī)所研究
氮化物的范德華外延：基底結(jié)構(gòu)、多性能控制和紫外光電器件應(yīng)用Van der Waals Epitaxy of Nitrides: Substrate Construction, Multi-Properties Control and Ultraviolet Optoelectronic Device Application孫曉娟中科院長(zhǎng)春光機(jī)所研究員SUN XiaojuanProfessor of Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
119600
guansheng2023-05-19 14:58
中國(guó)科學(xué)院半導(dǎo)體所研
12750
中國(guó)科學(xué)院半導(dǎo)體所研
超寬禁帶六方氮化硼二維原子晶體及其光電器件Growth of ultra-wide band-gap two-dimensional hexagonal boron nitride for optoelectronic devices張興旺中國(guó)科學(xué)院半導(dǎo)體所研究員ZHANG XingwangProfessor of Institute of Semiconductors, Chinese Academy of Sciences
127500
guansheng2023-05-19 14:21