GaAs VCSEL 先進(jìn)封裝技術(shù)進(jìn)展及應(yīng)用Progress of Advanced Packaging Techniques for GaAs-based VCSELs and Its Applications林勝寧波升譜光電股份有限公司副總經(jīng)理LIN ShengDeputy General Manager of NINGBO SUNPU LED CO.,LTD.
氮化鎵基激光器和超輻射管研究進(jìn)展Progress of GaN based laser diodes and superluminescene diodes劉建平中國(guó)科學(xué)院蘇州納米技術(shù)與納米仿生研究所納米器件研究部 研究員LIU JianpingProfessor of Nanodevice Research Department of Suzhou Institute of Nanotechnology and Nanobionics, Chinese Academy of Sciences
Critical aspects of deep-UV LED design and operation深紫外LED仿真設(shè)計(jì)及操作關(guān)鍵技術(shù)進(jìn)展茅艷琳蘇州思體爾軟件科技有限公司技術(shù)支持工程師Yanlin MaoTechnical support engineer of SuZhou STR Software Technology Co., Led.
橫向和縱向-Ga2O3功率MOSFET的十年進(jìn)展A Decade of Advances in Lateral and Vertical -Ga2O3 Power MOSFETs黃文海香港科技大學(xué)副教授Man Hoi WONGAssociate Professor of The Hong Kong University of Science and Technology
金剛石微波功率器件進(jìn)展Progress in Diamond Microwave Power Devices馮志紅中國(guó)電科首席科學(xué)家、中國(guó)電科13所研究員、專用集成電路國(guó)家級(jí)重點(diǎn)實(shí)驗(yàn)室常務(wù)副主任FENG ZhihongHebei Semiconductor Research lnstitute
污水處理廠深紫外消毒設(shè)計(jì)及應(yīng)用進(jìn)展Design and application progress of DUV disinfection in sewage treatment plants杜軍北控水務(wù)集團(tuán)技術(shù)管理部水務(wù)經(jīng)理Jon DUBeijing enterprise water group Limited
Micro-LED 顯示產(chǎn)業(yè)化進(jìn)展與挑戰(zhàn)秦鋒天馬微電子集團(tuán)研發(fā)中心總經(jīng)理、Micro-LED研究院院長(zhǎng)QIN FengGeneral Manager of the RD Center and President of Institute of Micro-LED, Tianma Microelectronics Co., Ltd.
SiC功率MOSFET技術(shù)及應(yīng)用進(jìn)展柏松中國(guó)電子科技集團(tuán)首席專家、寬禁帶半導(dǎo)體電力電子器件國(guó)家重點(diǎn)實(shí)驗(yàn)室主任BAI SongChief Scientist of China Electronics Technology Group Corporation, Director of National Key Laboratory of Wide Bandgap Semiconductor Power Electronic Devices
SiC功率器件在光伏逆變器中的應(yīng)用進(jìn)展Application progress of SiC power devices in photovoltaic inverters劉保頌錦浪科技技術(shù)研究中心總監(jiān)LIU Baosong Technical director of Ginlong Technologies co.,ltd
半導(dǎo)體激光器的理論和實(shí)踐都取得巨大成果。近年來,GaAs基大功率半導(dǎo)體激光器憑其優(yōu)勢(shì)，在眾多領(lǐng)域得到廣泛應(yīng)用。但是GaAs基大功率半導(dǎo)體激光器仍面臨著功率不足、發(fā)熱量大及光束質(zhì)量差的問題。光電性能差是限制其應(yīng)用的關(guān)鍵問題，如何進(jìn)一步提高激光器的光電性能是半導(dǎo)體激光器面臨的挑戰(zhàn)。朱振博士在報(bào)告中，詳細(xì)分享了GaAs半導(dǎo)體激光器關(guān)鍵技術(shù)及最新研究進(jìn)展，報(bào)告指出基于GaAs襯底的6x x（635-690），8 x x（780-880），9 x x
第三代半導(dǎo)體碳化硅器件產(chǎn)業(yè)化關(guān)鍵技術(shù)及發(fā)展進(jìn)展The key technology and development progress of the Wide Band-gap semiconductor silicon carbide device industrialization鈕應(yīng)喜蕪湖啟迪半導(dǎo)體有限公司研發(fā)總監(jiān)NIU YingxiRD Director of Wuhu Advanced Semiconductor Manufacturing Co.,ltd
