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哈爾濱工業(yè)大學(xué)（深圳
5590
哈爾濱工業(yè)大學(xué)（深圳
氧化鎵材料和電子器件的熱特性Thermal Characteristics of Ga2O3Materials and Electronic Devices孫華銳哈爾濱工業(yè)大學(xué)（深圳）教授，理學(xué)院副院長(zhǎng)SUN HuaruiProfessor of Harbin Institute of Technology, Shenzhen
55900
IFWS2025-01-09 13:56
鎵和半導(dǎo)體李山:氧化
5580
鎵和半導(dǎo)體李山:氧化
氧化鎵PECVD外延生長(zhǎng)及光電信息感知器件研究Research on PECVD Epitaxial Growth of Gallium Oxide and the Photoelectric Information Sensing Devices李山南京郵電大學(xué)副教授、蘇州鎵和半導(dǎo)體研發(fā)總監(jiān)LI ShanAssociate Professor, Nanjing University of Posts and Telecommunications, RD director of Suzhou GAO Semiconductor Co. Ltd.
55800
IFWS2025-01-09 13:53
日本京都大學(xué)教授Naok
10790
日本京都大學(xué)教授Naok
太陽能衛(wèi)星及相關(guān)波束無線電力傳輸技術(shù)的最新研發(fā)進(jìn)展Recent RD of Solar Power Satellite and Related Beam Wireless Power Transfer TechnologyNaoki SHINOHARA日本京都大學(xué)教授NaokiSHINOHARAProfessor of Kyoto University,Japan
107900
guansheng2023-05-22 15:27
西安電子科技大學(xué)王鵬
9610
西安電子科技大學(xué)王鵬
雙閾值耦合AlGaN/GaN HEMT中用于優(yōu)化Ka波段高電場(chǎng)線性度的多指漏極板研究Investigation of multi-fingers drain field plate in dual-threshold coupling AlGaN/GaN HEMTs for optimizing linearity at high electrical field in Ka-bands王鵬飛西安電子科技大學(xué)Wang PengfeiXidian University
96100
guansheng2023-05-22 15:22
昂瑞微電子副總經(jīng)理黃
10400
昂瑞微電子副總經(jīng)理黃
國產(chǎn)突破，中國射頻前端產(chǎn)業(yè)引領(lǐng)5G 芯時(shí)代Domestic breakthrough, China's RF front-end industry leads the 5G Chip era黃鑫北京昂瑞微電子技術(shù)股份有限公司副總經(jīng)理HUANG XinVice General Manager of Beijing OnMicro Electronics Co., Ltd.
104000
guansheng2023-05-22 15:21
山東大學(xué)新一代半導(dǎo)體
11120
山東大學(xué)新一代半導(dǎo)體
電流/功率截止頻率為135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鵬山東大學(xué)新一代半導(dǎo)體材料研究院研究員CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University
111200
guansheng2023-05-22 15:20
中國電科十三所正高級(jí)
9910
中國電科十三所正高級(jí)
47GHz-52GHz功率放大器芯片套片設(shè)計(jì)Design of 47GHz-52GHz Power Amplifier Chipset 杜鵬搏中國電科十三所正高級(jí)工程師、河北新華北集成電路有限公司副總經(jīng)理DUPengboSenior Engineer of Hebei Semiconductor Institute, Deputy General Manager of Hebei New North China Integrated Circuit Co., Ltd
99100
guansheng2023-05-22 15:19
南京理工大學(xué)副教授黃
11220
南京理工大學(xué)副教授黃
28GHz氮化鎵基時(shí)間調(diào)制波束成形系統(tǒng)28GHz GaN based time modulated beamforming system黃同德南京理工大學(xué)副教授HUANG TongdeAssociate Professor of Nanjing University of Science and Technology
112200
guansheng2023-05-22 15:18
能訊高能半導(dǎo)體副總裁
10770
能訊高能半導(dǎo)體副總裁
氮化鎵推動(dòng)5G、射頻能源及其他領(lǐng)域的創(chuàng)新GaN Driving innovation in 5G, RF Energy and beyond裴軼蘇州能訊高能半導(dǎo)體有限公司副總裁PEI YiVice President of Dynax Semiconductor, Inc
107700
guansheng2023-05-22 15:17
復(fù)旦大學(xué)教授黃偉：寬
9380
復(fù)旦大學(xué)教授黃偉：寬
寬帶GaN毫米波新器件研究Research on Broadband GaN Millimeter Wave Devices黃偉復(fù)旦大學(xué)教授HUANG WeiProfessor of Fudan University
93800
guansheng2023-05-22 15:16
國博電子副總經(jīng)理錢峰
8970
國博電子副總經(jīng)理錢峰
5G移動(dòng)通信用化合物器件研究Research on Compound Semiconductor Devices for 5G Mobile Communication錢峰南京國博電子股份有限公司副總經(jīng)理QIAN FengDeputy General Manager of Nanjing Guobo Electronics Co., Ltd
89700
guansheng2023-05-22 15:15
澳大利亞麥考瑞大學(xué)教
7820
澳大利亞麥考瑞大學(xué)教
Scalable nonlinear RF modeling of GaN HEMTs with industry standard ASM-HEMT compact modelSourabh KHANDELWAL澳大利亞麥考瑞大學(xué)教授Sourabh KHANDELWALProfessor of Macquarie University, Australia
78200
guansheng2023-05-22 15:14
西交利物浦大學(xué)朱昱豪
7200
西交利物浦大學(xué)朱昱豪
35-5V單片集成GaN基DC-DC浮動(dòng)降壓轉(zhuǎn)換器A 35-5 V Monolithic integrated GaN-based DC-DC Floating Buck Converter朱昱豪西交利物浦大學(xué)ZHU YuhaoXi'an Jiaotong-Liverpool University
72000
guansheng2023-05-22 15:14
中科院寧波材料所戴貽
6950
中科院寧波材料所戴貽
無等離子體損傷GaN HEMT極化隔離的設(shè)計(jì)與優(yōu)化Design and optimization of polarization isolation toward plasma-damage-free GaN HEMT戴貽鈞中國科學(xué)院寧波材料技術(shù)與工程研究所DAI YiyunNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
69500
guansheng2023-05-22 15:13
中科院蘇州納米所助理
7720
中科院蘇州納米所助理
功率HEMT的p-GaN柵極可靠性及其加固方法GaN Gate Reliability and Its Reinforcement Techniques in Power HEMTs鐘耀宗中國科學(xué)院蘇州納米技術(shù)與納米仿生研究所助理研究員ZHONG YaozongAssistant Professor of Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
77200
guansheng2023-05-22 15:12
中國科學(xué)院北京納米能
10620
中國科學(xué)院北京納米能
AlGaN/GaN HEMT能帶工程和界面調(diào)制AlGaN/GaN HEMT energy band engineering and interface modulation胡衛(wèi)國中國科學(xué)院北京納米能源與系統(tǒng)研究所研究員HU WeiguoProfessor of Beijing Institute of Nanoenergy and Systems, Chinese Academy of Sciences
106200
guansheng2023-05-22 15:02
電子科技大學(xué)博士陳匡
8070
電子科技大學(xué)博士陳匡
p-GaN Gate HEMT器件閾值穩(wěn)定性及其機(jī)理Study of the Physics of Vth Instability of p-GaN Gate HEMT陳匡黎電子科技大學(xué)博士ZHOU QiProfessor of University of Electronic Science and Technology of China
80700
guansheng2023-05-22 15:02
美國弗吉尼亞理工大學(xué)
15540
美國弗吉尼亞理工大學(xué)
中高壓（1-10 kV）氮化鎵功率器件新進(jìn)展New Progress in Medium and High Voltage (1-10 kV) GaN Power Devices張宇昊美國弗吉尼亞理工大學(xué)助理教授ZHANG Yuhao Assistant Professor, Virginia Tech University
155400
guansheng2023-05-22 15:01
潤(rùn)新微電子副總經(jīng)理王
6690
潤(rùn)新微電子副總經(jīng)理王
后快充時(shí)代的氮化鎵功率器件產(chǎn)業(yè)化GaN Power Devices Beyond Adapter Applications王榮華潤(rùn)新微電子（大連）有限公司副總經(jīng)理WANG RonghuaVice General Manager of Runxin Microelectronics
66900
guansheng2023-05-22 15:00
加拿大滑鐵盧大學(xué)副教
9190
加拿大滑鐵盧大學(xué)副教
RecentProgressoftheMITVirtual-SourceGaNHEMT(MVSG)CompactModelLan WEI加拿大滑鐵盧大學(xué)副教授Lan WEIAssociate Professor of University of Waterloo, Canada
91900
guansheng2023-05-22 14:59