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高功率寬禁帶半導體射頻器件研究進展Research Progress of High Power Wide Band-gap Semiconductor RF Devices張進成西安電子科技大學副校長、教授ZHANG JinchengVice PresidentProfessor of Xidian University

基于大失配外延的氮化物第三代半導體材料與器件Nitride Semiconductor Materials and Devices Based on Large Mismatch Epitaxy沈波北京大學理學部副主任、特聘教授SHEN Bo Deputy Deanand Distinguished Professorof Facultyof Science, Peking University

加快碳化硅芯片和電力電子器件的商業化發展Accelerating Commercialization of SiC Chips and Power ElectronicsVictor VELIADIS美國PowerAmerica執行董事兼CTO、ICSCRM 2024 大會主席、北卡羅萊納州立大學教授、IEEE寬禁帶功率半導體技術路線圖委員會(ITRW)主席Victor VELIADISExecutiveDirector and CTO of PowerAmerica, Chair of ICSCRM 2024, Professor of North Carolina State Universityand Chair of ITRW ( IEEE Wide Ban

面向SiC功率器件的裝備與工藝解決方案NAURA Solutions for SiC Power Devices張軼銘北京北方華創微電子裝備有限公司Zhang YimingBeijing NAURA Microelectronics Equipment Co.,Ltd

AlN基高壓高頻功率器件研究進展及挑戰Research Progress and Application Prospect ofAlNSingle Crystal Materials周弘西安電子科技大學教授ZHOUHongProfessor at Xidian University

氮化鋁基半導體材料及器件的最新進展Recent Progress on AlN-based Semiconductor Materials and Devices谷保芳孝日本NTT基礎研究實驗室負責人、資深杰出研究員Taniyasu YOSHITAKAGroup leader and Senior Distinguished Researcher of NTT Basic Research Laboratories, NTT Corporation

基于量產的氮化鎵基光電子及功率器件的外延建模Modeling of Production-scale Epitaxy for Optical and Power GaN-based Devices LAMBRINAKIMARIIA蘇州思體爾軟件科技有限公司總經理LAMBRINAKI MARIIAGeneral Manager of Suzhou STR Software CO.,Ltd.

軌道交通SiC功率器件研究與應用進展劉國友株洲中車時代電氣股份有限公司中車科學家、功率半導體與集成技術全國重點實驗室副主任

面向的Ga2O3功率器件應用：封裝、魯棒性和多維器件Ga2O3Power Device Toward Application: Packaging, Robustness, and Multidimensional Devices張宇昊弗吉尼亞理工大學電力電子中心副教授ZHAGN YuhaoAssociate Professor of Center for Power Electronics Systems at Virginia Tech

氧化鎵高導熱異質集成射頻器件High Thermal Conductivity Heterogeneous Integrated RF Devices for Ga?O?葉建東南京大學教授YE JiandongProfessor of Nanjing University

氧化鎵材料和電子器件的熱特性Thermal Characteristics of Ga2O3Materials and Electronic Devices孫華銳哈爾濱工業大學（深圳）教授，理學院副院長SUN HuaruiProfessor of Harbin Institute of Technology, Shenzhen

氧化鎵PECVD外延生長及光電信息感知器件研究Research on PECVD Epitaxial Growth of Gallium Oxide and the Photoelectric Information Sensing Devices李山南京郵電大學副教授、蘇州鎵和半導體研發總監LI ShanAssociate Professor, Nanjing University of Posts and Telecommunications, RD director of Suzhou GAO Semiconductor Co. Ltd.

寬帶GaN毫米波新器件研究Research on Broadband GaN Millimeter Wave Devices黃偉復旦大學教授HUANG WeiProfessor of Fudan University

5G移動通信用化合物器件研究Research on Compound Semiconductor Devices for 5G Mobile Communication錢峰南京國博電子股份有限公司副總經理QIAN FengDeputy General Manager of Nanjing Guobo Electronics Co., Ltd

p-GaN Gate HEMT器件閾值穩定性及其機理Study of the Physics of Vth Instability of p-GaN Gate HEMT陳匡黎電子科技大學博士ZHOU QiProfessor of University of Electronic Science and Technology of China

中高壓（1-10 kV）氮化鎵功率器件新進展New Progress in Medium and High Voltage (1-10 kV) GaN Power Devices張宇昊美國弗吉尼亞理工大學助理教授ZHANG Yuhao Assistant Professor, Virginia Tech University

后快充時代的氮化鎵功率器件產業化GaN Power Devices Beyond Adapter Applications王榮華潤新微電子（大連）有限公司副總經理WANG RonghuaVice General Manager of Runxin Microelectronics

Si基GaN器件及系統研究與產業前景Research of GaN-on-Si devices and the related systems于洪宇南方科技大學深港微電子學院院長、教授YU HongyuDeanProfessor of School of Microelectronics at Southern University of Science and Technology

氮化鎵功率器件耐壓理論與電場均勻化技術研究Research on the breakdown theory and electric field homogenization technology of GaN-based Power Devices劉建華南京郵電大學博士

AECQ-101車規級認證的高性能1200V SiC MOS器件史文華清純半導體研發經理SHI Wenhua RD Manager of SiCHAIN Co.,Ltd.