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基于大失配外延的氮化物第三代半導體材料與器件Nitride Semiconductor Materials and Devices Based on Large Mismatch Epitaxy沈波北京大學理學部副主任、特聘教授SHEN Bo Deputy Deanand Distinguished Professorof Facultyof Science, Peking University

半導體材料產業的現狀和挑戰Status and Challenge of Semiconductor Material Industry楊德仁中國科學院院士、浙大寧波理工學院校長、浙江大學硅及先進半導體材料全國重點實驗室主任、教授YANG DerenAcademician of Chinese Academy of Sciences,President of NingboTech University, Professor and Director of State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University

GaN基光電材料外延與MOCVD反應腔結構關聯性研究Research on the Correlation Between GaN-based Optoelectronic Material Epitaxy and MOCVD Reactor Chamber Structure姚威振中國科學院半導體研究所副研究員、中科重儀半導體聯合創始人YAO WeizhenAssociate Professor of Institute of Semiconductors, Chinese Academy of Sciences, Co-founder of CASInstruments Semiconductor Co., Ltd.

硅襯底GaN基光電材料外延生長Epitaxial Growth of GaN Based Photoelectric Materials on Silicon Substrate孫錢中國科學院蘇州納米技術與納米仿生研究所研究員SUN QianProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

氮化鋁基半導體材料及器件的最新進展Recent Progress on AlN-based Semiconductor Materials and Devices谷保芳孝日本NTT基礎研究實驗室負責人、資深杰出研究員Taniyasu YOSHITAKAGroup leader and Senior Distinguished Researcher of NTT Basic Research Laboratories, NTT Corporation

氮化鋁單晶材料研究進展與應用展望Research Progress and Application Prospect of AlN Single Crystal Materials程紅娟中國電子科技集團第四十六所新材料研發中心副主任CHENG HongjuanDeputy Director of New Materials Research and Development Center of CETC 46THInstitute

第四代半導體材料平坦化研究進展Research Progress on Planarization of Fourth Generation Semiconductor Materials趙志強北京艾姆希半導體科技有限公司銷售總監ZHAO ZhiqiangSales Director of MCF Technologies Ltd.

氧化鎵材料和電子器件的熱特性Thermal Characteristics of Ga2O3Materials and Electronic Devices孫華銳哈爾濱工業大學（深圳）教授，理學院副院長SUN HuaruiProfessor of Harbin Institute of Technology, Shenzhen

電流/功率截止頻率為135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鵬山東大學新一代半導體材料研究院研究員CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University

無等離子體損傷GaN HEMT極化隔離的設計與優化Design and optimization of polarization isolation toward plasma-damage-free GaN HEMT戴貽鈞中國科學院寧波材料技術與工程研究所DAI YiyunNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences

新型寬禁帶壓電半導體材料-Ga2O3及其在射頻諧振器中的應用-Ga2O3: an Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators王鋼中山大學佛山研究院院長，中山大學半導體照明材料及器件國家地方聯合工程實驗室主任、教授WANG GangProfessor and Dean of Foshan Institute of Sun Yat-Sen University; Director of the National-Local Joint Engineering Laboratory of Semiconductor

用于先進SiC功率模塊的整體解決（核心設備/材料/工程）方案Overall solution (core equipment/materials/engineering) for advanced SiC power module周鑫蘇州博湃半導體技術有限公司市場銷售總監ZHOU XinDirector of Sales Marketing, Suzhou Bopai Semiconductor Technology Co., Ltd.

高性能GaN-on-GaN材料與器件的外延生長High output power and bandwidth of c-plane GaN-on-GaN micro-LED for high-speed visible light communication王國斌江蘇第三代半導體研究院研發部負責人WANG GuobinSenior Project ManagerHead of RD Dept of Jiangsu Institute of Advanced Semiconductors

平片藍寶石襯底上高質量AlN材料MOCVD外延生長High quality AlN growth on flat sapphire at relative low temperature by MOCVD趙德剛中國科學院半導體所研究員ZHAO DegangProfesor of Institute of Semiconductors, CAS

垂直氮化鎵器件，尤其是硅襯底上，因其低成本襯底而引起了人們對大功率應用的廣泛關注。但其性能仍低于氮化鎵襯底上的垂直氮化鎵器件。關鍵問題是在硅襯底上實現低位錯密度和連續厚氮化鎵層具有挑戰性。會上，北京大學馮玉霞博士結合具體的研究實踐，分享了Si襯底上GaN基外延材料生長及雜質缺陷研究的成果，首次提供了在C摻雜半絕緣氮化鎵中取代C原子占據N位點的明確證據。

西安電子科技大學教授張金風做了題為金剛石超寬禁帶半導體材料和器件新進展的主題報告。她介紹說，金剛石屬于新興的超寬禁帶半導體材料，具有禁帶寬度大，耐擊穿，載流子遷移率高，熱導率極高，抗輻照等優點。在熱沉，大功率、高頻器件，光學窗口，量子信息等領域具有極大應用潛力。報告中介紹了大尺寸金剛石單晶的制備方法最成功的是同質外延的克隆拼接生長方法和在Ir襯底上異質外延的生長方法。她表示，實現室溫下高電離率的體摻

英諾賽科研發中心副總裁David C. ZHOU分享了《200mm 40V-650V E型硅基氮化鎵材料功率器件技術：從器件、封裝、到系統》研究報告