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6英寸復(fù)合襯底上厚GaN外延生長(zhǎng)研究Growth of Thick GaN Epilayers on 150mm Engineered Substrate韓穎中國(guó)電子科技集團(tuán)第十三所高級(jí)工程師HAN YingSenior Engineer of Hebei Semiconductor Research Institute

氮化鋁單晶材料研究進(jìn)展與應(yīng)用展望Research Progress and Application Prospect of AlN Single Crystal Materials程紅娟中國(guó)電子科技集團(tuán)第四十六所新材料研發(fā)中心副主任CHENG HongjuanDeputy Director of New Materials Research and Development Center of CETC 46THInstitute

SiC MOSFET熱阻精確測(cè)量技術(shù)研究Research on the technique of accurately measuring thermal resistance of SiC MOSFET劉奧中國(guó)電子科技集團(tuán)公司第五十五研究所LIU AONanjing Electronics Research Institute

SiC功率器件制造裝備技術(shù)及發(fā)展趨勢(shì)Technology and development trends of SiC power devices manufacturing equipment鞏小亮中國(guó)電子科技集團(tuán)公司第四十八研究所、半導(dǎo)體裝備研究部主任Xiaoliang GONGDirector of Semiconductor equipment research department, The 48th Research Institute of China Electronics Technology Group Corporation

使用MOCVD生長(zhǎng)的QCL激光器Epitaxy of mid- infrared quantum cascade lasers fully by MOCVD房玉龍中電科十三所基礎(chǔ)研究部主任FANG YulongHebei Semiconductor Institute

MOCVD生長(zhǎng)高質(zhì)量6英寸SiC上GaN HEMT材料高楠，房玉龍*，尹甲運(yùn)，張志榮，王波，李佳，蘆偉立，陳宏泰，牛晨亮中國(guó)電子科技集團(tuán)公司第十三研究所

SiC功率器件制造工藝特點(diǎn)與核心裝備創(chuàng)新進(jìn)展Manufacturing process characteristics and key equipment development of SiC power devices鞏小亮中國(guó)電子科技集團(tuán)公司第四十八研究所 半導(dǎo)體裝備研究部副主任GONGXiaoliang Deputy director of Semiconductor equipment research department, the 48th Research Institute of China Electronics Technology Group Corporation

《氮化鎵量子阱中電子自旋弛豫性質(zhì)研究》作者：張仕雄，唐寧，劉星辰，張曉玥，付雷，張?jiān)品v，孫真昊，葛惟昆，沈波單位：北京大學(xué)物理學(xué)院人工微結(jié)構(gòu)與介觀物理國(guó)家重點(diǎn)實(shí)驗(yàn)室

中電科電子裝備集團(tuán)有限公司離子注入機(jī)技術(shù)總監(jiān)張叢分享了《國(guó)產(chǎn)離子注入機(jī)發(fā)展及應(yīng)用》主題報(bào)告。

極智報(bào)告|中電科55所：SiC電力電子器件產(chǎn)品國(guó)產(chǎn)化進(jìn)展