基于大失配外延的氮化物第三代半導體材料與器件Nitride Semiconductor Materials and Devices Based on Large Mismatch Epitaxy沈波北京大學理學部副主任、特聘教授SHEN Bo Deputy Deanand Distinguished Professorof Facultyof Science, Peking University
LED光療在女性生殖健康中的臨床應用Clinical Applications of LED Phototherapy in Women's Reproductive Health吳章鑫北京大學第三醫院婦科主治醫師WU ZhangxinGynecologist of Peking University Third Hospital
AlGaN/GaN HEMT能帶工程和界面調制AlGaN/GaN HEMT energy band engineering and interface modulation胡衛國中國科學院北京納米能源與系統研究所研究員HU WeiguoProfessor of Beijing Institute of Nanoenergy and Systems, Chinese Academy of Sciences
藍寶石襯底InGaN基紅色LED及MicroLEDInGaN based red LEDs and MicroLEDs on sapphire substrate王新強北京大學教授、北大東莞光電研究院院長WANG XinqiangDean of Dongguan Institute of Opto-electronics, Peking University
超高熱導率立方砷化硼和氮化硼晶體Cubic boron arsenide and boron nitride crystals with ultrahigh thermal conductivity 宋柏北京大學工學院特聘研究員SONG BaiProfessor of Peking University
光照治療提高抑郁發作患者的腦功能light therapy improves brain functioning of patients with depression黨衛民北京大學第六醫院（北京大學精神衛生研究所）精神科醫生、心理治療師DANG WeiminPsychiatristPsychotherapist Peking University Sixth Hospital (Peking University Institute of Mental Health)
GaN/SiC功率器件在航天電源的應用前景Application prospect of GaN/SiC power devices in aerospace power supply萬成安北京衛星制造廠有限公司領域總師WAN Chengan Field Chief Engineer of Beijing Satellite Manufacturing Factory Co., Ltd
AlGaN基低維量子結構外延和電導率調控研究Study on the epitaxy and conductivity regulation of AlGaN based low dimensional quantum structures許福軍北京大學物理學院副教授Xu Fujun - Associate Professor, Peking University
北京大學陳志忠教授在《Operation behavior under extremely high injection level for GaN-based micron LED》報告中指出，我們制作不同直徑微柱LEDs不同波長和不同的基質。測量了電致發光(EL)譜和電流-電壓(I-V)曲線。高飽和電流密度達到300 kA / cm2 20m紫外線導致氮化鎵襯底。效率為LEDs下垂也大大提高。采用橫光軟件模擬高注入水平下的輸運和重組過程。綜合量子漂移-擴散模型考慮了多體效應。并介紹了超高注入機理。
