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【芯友薈】對話安儲科技董事兼SiC總經理李治豪：聚焦配方型功能電子化學品在第三代半導體領域的機遇前景，分享在國產化以及國際競爭中的創新突破路徑！SEMICON China 2025專訪精彩薈萃

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高功率寬禁帶半導體射頻器件研究進展Research Progress of High Power Wide Band-gap Semiconductor RF Devices張進成西安電子科技大學副校長、教授ZHANG JinchengVice PresidentProfessor of Xidian University

融通半導體產業鏈 構建應用創新生態圈Integrate Semiconductor Industry Chain to Build Application Innovation Ecosystem李虹華潤微電子有限公司總裁LI HongPresident of China Resources Microelectronics Limited

基于大失配外延的氮化物第三代半導體材料與器件Nitride Semiconductor Materials and Devices Based on Large Mismatch Epitaxy沈波北京大學理學部副主任、特聘教授SHEN Bo Deputy Deanand Distinguished Professorof Facultyof Science, Peking University

2024中國第三代半導體技術十大進展/ 2024 China's Top 10 Advances in Wide Band-gap Semiconductor Technology

半導體材料產業的現狀和挑戰Status and Challenge of Semiconductor Material Industry楊德仁中國科學院院士、浙大寧波理工學院校長、浙江大學硅及先進半導體材料全國重點實驗室主任、教授YANG DerenAcademician of Chinese Academy of Sciences,President of NingboTech University, Professor and Director of State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University

從芯到屏，垂直整合開啟Micro-LED智慧顯示時代From Chip to Screen, Vertical Integration - Open the Era of Micro-LED Smart Display席光義元旭半導體科技股份有限公司董事會主席兼CEOXI GuangyiChairman and CEO of Novoshine

面向Micro-LED封裝的先進半導體鍵合集成技術Advanced Semiconductor Bonding Technology for Micro-LED Integration母鳳文北京青禾晶元半導體科技有限責任公司董事長兼總經理MU FengwenPresident and General Manager of Innovative Semiconductor Substrate Technology co., Ltd.

基于混合鍵合的無損Micro-LED芯片技術Damage-free Micro-LED Based on Hybrid Bonding Technology 蔣振宇蘇州秋水半導體科技有限公司董事長JIANG ZhenyuPresidentof Suzhou QiuShui Semiconductor Technology Inc.

化合物半導體外延大規模量產解決方案High Volume Manufacturing of Compound Semiconductors Epitaxy方子文AIXTRON中國總經理FANG ZiwenGM of AIXTRON China

GaN基光電材料外延與MOCVD反應腔結構關聯性研究Research on the Correlation Between GaN-based Optoelectronic Material Epitaxy and MOCVD Reactor Chamber Structure姚威振中國科學院半導體研究所副研究員、中科重儀半導體聯合創始人YAO WeizhenAssociate Professor of Institute of Semiconductors, Chinese Academy of Sciences, Co-founder of CASInstruments Semiconductor Co., Ltd.

用于氮化鎵異質外延的高溫PVD氮化鋁緩沖層技術High Temperature PVD AlN e Buffer Layer Technology for GaN Heteroepitaxy

氮化鋁基半導體材料及器件的最新進展Recent Progress on AlN-based Semiconductor Materials and Devices谷保芳孝日本NTT基礎研究實驗室負責人、資深杰出研究員Taniyasu YOSHITAKAGroup leader and Senior Distinguished Researcher of NTT Basic Research Laboratories, NTT Corporation

碳化硅產業的機遇與挑戰周曉陽廣東芯聚能半導體有限公司總裁

安世碳化硅，綠色出行和綠色能源發展的助推器王駿躍安世半導體中國區SiC戰略及業務負責人

第四代半導體材料平坦化研究進展Research Progress on Planarization of Fourth Generation Semiconductor Materials趙志強北京艾姆希半導體科技有限公司銷售總監ZHAO ZhiqiangSales Director of MCF Technologies Ltd.

超寬禁帶半導體氧化鎵和氮化鋁特性研究Research on the Characteristics of Ultra-wide Bandgap Semiconductor GaO and AlN張道華深圳平湖實驗室第四代半導體首席科學家、新加坡工程院院士ZHANG DaohuaChief Scientist of Fourth-generation Semiconductors of Shenzhen Pinghu Laboratory, Academician the Academy of Engineering, Singapore

氧化鎵PECVD外延生長及光電信息感知器件研究Research on PECVD Epitaxial Growth of Gallium Oxide and the Photoelectric Information Sensing Devices李山南京郵電大學副教授、蘇州鎵和半導體研發總監LI ShanAssociate Professor, Nanjing University of Posts and Telecommunications, RD director of Suzhou GAO Semiconductor Co. Ltd.