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提高AlGaN基DUV-LED效率的薄p-GaN上的銀基鏤空反射電極Ag-based hollow reflective electrode on thin p-GaN layer for improving the light output efficiency of AlGaN-based deep-ultraviolet light-emitting diodes周玉剛南京大學(xué)電子科學(xué)與工程學(xué)院教授ZHOU YugangProfesor of School of Electronic Science and Engineering, Nanjing University

深紫外(DUV)和極深紫外(EUV)探測(cè)器在光刻、天文監(jiān)測(cè)以及國(guó)防預(yù)警等諸多領(lǐng)域具有非常廣闊的應(yīng)用前景。在適用于DUV和EUV探測(cè)的所有