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日本理化研究所平山量
22290
日本理化研究所平山量
用于病毒滅活的藍寶石生長230nm遠紫外光功率模組的開發(fā)研究Development of 230 nm Far-UVC LED Power Module Grown on c-Sapphire for Human Harmless Virus Inactivation平山秀樹日本理化研究所平山量子光素子研究室主任Hideki HIRAYAMAProfessor ofRIkagaku KENkyusho Institute of Physical and Chemical Research(RIKEN),Japan
222900
SSLCHINA2025-01-09 15:40
韓國東義大學(xué)教授Won-
5550
韓國東義大學(xué)教授Won-
SiC單晶的坩堝結(jié)構(gòu)及PVT生長工藝條件的改進SiC Single Crystals with Modification of Crucible Structure and Process Condition for PVT GrowthWon-Jae LEE韓國東義大學(xué)教授、釜山電力半導(dǎo)體研究所所長Won-JaeLEEProfessor of Dong-Eui University,Director of Busan Power Semiconductor Lab.
55500
IFWS2025-01-09 14:55
中科院蘇州納米所研究
5780
中科院蘇州納米所研究
硅襯底GaN基光電材料外延生長Epitaxial Growth of GaN Based Photoelectric Materials on Silicon Substrate孫錢中國科學(xué)院蘇州納米技術(shù)與納米仿生研究所研究員SUN QianProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences
57800
IFWS2025-01-09 14:41
南京大學(xué)劉歡：等離子
3480
南京大學(xué)劉歡：等離子
等離子體輔助分子束外延生長AlN薄膜AlN epilayers grown by plasma assisted molecular beam epitaxy劉歡南京大學(xué)LIU HuanNanjing University
34800
IFWS2025-01-09 14:40
中電科第十三所高級工
3240
中電科第十三所高級工
6英寸復(fù)合襯底上厚GaN外延生長研究Growth of Thick GaN Epilayers on 150mm Engineered Substrate韓穎中國電子科技集團第十三所高級工程師HAN YingSenior Engineer of Hebei Semiconductor Research Institute
32400
IFWS2025-01-09 14:27
中國科學(xué)院蘇州納米所
4440
中國科學(xué)院蘇州納米所
氨熱法氮化鎵單晶生長研究進展及面臨的挑戰(zhàn)Progress and Challenges in Bulk GaN Crystal Growth by Ammonothermal Method任國強中國科學(xué)院蘇州納米技術(shù)與納米仿生研究所、研究員REN GuoqiangProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences
44400
IFWS2025-01-09 14:24
鎵和半導(dǎo)體李山:氧化
5580
鎵和半導(dǎo)體李山:氧化
氧化鎵PECVD外延生長及光電信息感知器件研究Research on PECVD Epitaxial Growth of Gallium Oxide and the Photoelectric Information Sensing Devices李山南京郵電大學(xué)副教授、蘇州鎵和半導(dǎo)體研發(fā)總監(jiān)LI ShanAssociate Professor, Nanjing University of Posts and Telecommunications, RD director of Suzhou GAO Semiconductor Co. Ltd.
55800
IFWS2025-01-09 13:53
廈門大學(xué)副教授盧衛(wèi)芳
7530
廈門大學(xué)副教授盧衛(wèi)芳
Micro-LED用GaN納米線上生長的非極性GaInN/GaN多量子殼的系統(tǒng)研究Systematic investigation of nonpolar GaInN/GaN multiple-quantum-shells grown on GaN nanowires for Micro-LEDs盧衛(wèi)芳廈門大學(xué)物理科學(xué)與技術(shù)學(xué)院物理學(xué)系，副教授LU WeifangAssociate Professor, School of Physical Science and Technology, Xiamen University
75300
guansheng2023-05-22 14:12
中電科十三所基礎(chǔ)研究
13160
中電科十三所基礎(chǔ)研究
使用MOCVD生長的QCL激光器Epitaxy of mid- infrared quantum cascade lasers fully by MOCVD房玉龍中電科十三所基礎(chǔ)研究部主任FANG YulongHebei Semiconductor Institute
131600
guansheng2023-05-22 10:25
思體爾軟件副總經(jīng)理付
8760
思體爾軟件副總經(jīng)理付
超寬禁帶半導(dǎo)體氧化鎵及金剛石的晶體生長模擬研究Modeling of ultrawide Bandgap Semiconductor crystal growth for Gallium oxide and Diamond付昊蘇州思體爾軟件科技有限公司副總經(jīng)理Henry FUVice General Manager of SuZhou STR Software Technology Co., Ltd.
87600
guansheng2023-05-19 14:47
山東大學(xué)副教授穆文祥
9420
山東大學(xué)副教授穆文祥
-Ga2O3單晶的體晶生長與性能Bulk crystal growth and properties of?-Ga2O3Single Crystal穆文祥山東大學(xué)副教授MU WenxiangAssociate Professor of Shandong University
94200
guansheng2023-05-19 14:44
大連理工大學(xué)副教授張
12940
大連理工大學(xué)副教授張
利用高Al組分-(AlGa)2O3緩沖層在藍寶石襯底上優(yōu)化生長高質(zhì)量-Ga2O3厚膜Growth of high quality - Ga2O3 thick film on sapphire by using high Al content - (AlGa)2O3 buffer layer張赫之大連理工大學(xué)副教授ZHANG HezhiAssociate professor of Dalian University of Technology
129400
guansheng2023-05-19 14:41
西安電子科技大學(xué)張金
15980
西安電子科技大學(xué)張金
MPCVD法金剛石同質(zhì)外延生長及MOS器件技術(shù)Homogeneous epitaxial diamond growth by MPCVD and its MOS device technology張金風西安電子科技大學(xué)教授ZHANG JinfengProfessor of Xidian University
159800
guansheng2023-05-19 14:40
湖北大學(xué)何云斌教授：
11360
湖北大學(xué)何云斌教授：
MgO（100）上生長柱狀納米晶b-Ga2O3外延薄膜及其高靈敏度日盲探測器研究Columnar-nanodomained epitaxial b-Ga2O3 thin films on MgO(100) for solar-blind photodetectors with exceedingly high sensitivity何云斌湖北大學(xué)教授HE YunbinProfessor of Hubei University
113600
guansheng2023-05-19 14:23
芯元基半導(dǎo)體總經(jīng)理郝
7890
芯元基半導(dǎo)體總經(jīng)理郝
用于Micro LED芯片規(guī)模量產(chǎn)化的化學(xué)剝離生長襯底技術(shù)Chemical Peel Growth Substrate Technology for Mass Production of Micro LED Chips郝茂盛上海芯元基半導(dǎo)體科技有限公司總經(jīng)理HAO MaoshengGeneral Manager of Shanghai Chipfoundation Semiconductor Technology Co., Ltd.
78900
guansheng2023-05-19 11:48
江蘇第三代半導(dǎo)體研究
12950
江蘇第三代半導(dǎo)體研究
高性能GaN-on-GaN材料與器件的外延生長High output power and bandwidth of c-plane GaN-on-GaN micro-LED for high-speed visible light communication王國斌江蘇第三代半導(dǎo)體研究院研發(fā)部負責人WANG GuobinSenior Project ManagerHead of RD Dept of Jiangsu Institute of Advanced Semiconductors
129500
guansheng2023-05-19 08:56
奧趨光電CTO王琦琨：P
5450
奧趨光電CTO王琦琨：P
PVT法同質(zhì)外延AlN生長和p型摻雜面臨的挑戰(zhàn)Challenges on homoepitaxial AlN growth and p-type doping by the PVT method王琦琨奧趨光電技術(shù)（杭州）有限公司研發(fā)總監(jiān)（CTO）
54500
guansheng2023-05-19 08:43
桑立雯：利用AlN傳導(dǎo)
6510
桑立雯：利用AlN傳導(dǎo)
利用AlN傳導(dǎo)層在GaN襯底上外延生長金剛石薄膜及其熱傳輸特性Thermal dissipation from GaN to diamond with AlN conduction layer桑立雯日本國立物質(zhì)材料研究所獨立研究員SANG LiwenIndependent Scientist of National Institute for Materials Science (NIMS), Japan
65100
guansheng2023-05-19 08:42
中國科學(xué)院半導(dǎo)體所研
7130
中國科學(xué)院半導(dǎo)體所研
平片藍寶石襯底上高質(zhì)量AlN材料MOCVD外延生長High quality AlN growth on flat sapphire at relative low temperature by MOCVD趙德剛中國科學(xué)院半導(dǎo)體所研究員ZHAO DegangProfesor of Institute of Semiconductors, CAS
71300
guansheng2023-05-18 16:19
木林森執(zhí)行總經(jīng)理唐國
5550
木林森執(zhí)行總經(jīng)理唐國
淺議萬物生長靠燈唐國慶木林森股份有限公司執(zhí)行總經(jīng)理TANG GuoqingExecutive General Manager of MLS Co., LTD., Vice President of China Solid State Lighting Alliance(CSA)
55500
guansheng2023-05-18 11:48